Nantero Adds Previous TSMC Executive Dr. Shang-Yi Chiang to its Advisory Board; Strengthens Executive Management Team

  • World Class Advisory Board Highlights Nantero’s Growth Potential
  • Former Spansion and AMD Executive Lee Cleveland Leading Nantero’s Chip Design Team Working on Exciting New Products Such as Multi-Gigabyte High-Speed DDR4-Compatible Nonvolatile Standalone Memories

WOBURN, MA – AUGUST 4, 2015 – Nantero, the world leader in carbon nanotube electronics, today announced the appointment of industry veteran Dr. Shang-Yi Chiang to its Advisory Board. Dr. Chiang was previously an Executive Vice President, Co-Chief Operating Officer and Senior Vice President of R&D at TSMC before announcing his retirement in October 2013. In addition, Nantero also announced the hiring of Lee Cleveland, formerly in charge of flash design at Spansion and AMD, as the company’s new VP of Design responsible for leading Nantero’s complete chip design team.

“Nantero continues to attract the industry’s brightest and most innovative minds both internally and on an advisory basis,” said Greg Schmergel, Co-Founder, CEO and President of Nantero. “This added expertise will be instrumental in helping the company deliver a new generation of memory with the unique properties of DRAM-like speed, nonvolatility, and ultra-high-densities, for both standalone and embedded use.”

About Dr. Chiang

With more than 40-years experience in the semiconductor industry, Dr. Chiang has contributed to the research and development of CMOS, NMOS, Bipolar, DMOS, SOS, SOI, GaAs lasers, LED, E-Beam lithography, and silicon solar cells. While at TSMC, his R&D team set milestones in semiconductor technology in the 0.25 micron, 0.18 micron, 0.15 micron, 0.13 micron, 90nm, 65nm, 40nm, and 28nm generations, and this team continues to extend to the 20nm, 16nm FinFET, and 10nm generations. Under his leadership, TSMC rose to become a semiconductor technology leader with its R&D organization growing from 148 to 4,000 people, while annual R&D spending rising from $80 million to $1.6 billion.

Dr. Chiang earned his Bachelor of Science degree from National Taiwan University in 1968, his Master of Science degree from Princeton University in 1970, and his Doctorate from Stanford University in 1974, all in electrical engineering. After completing his studies, he worked at ITT Corporation, Texas Instruments and Hewlett-Packard. In 2001, he was chosen as one of 50 “Stars of Asia” by Businessweek Magazine, together with then Japanese Prime Minister Mr. Junichiro Koizumi and the mayor of Seoul Mr. Lee Myung-bak. Dr. Chiang is also a fellow of the Institute of Electrical and Electronics Engineers (IEEE).

“Nantero’s next generation NRAM memory has the potential to be a game-changer in both standalone and embedded memory,” said Dr. Chiang. “I am pleased to work with the experienced and ambitious team Nantero has put together as they embark on their next phase of growth and industry leadership.”

About Lee Cleveland

As Nantero’s new VP of Design, Lee Cleveland has already recruited a world-class design team with experience in both high-density DRAM and flash design. This team is currently working on exciting new

product designs, including multi-gigabyte high speed DDR4-compatible nonvolatile standalone memories. Before joining Nantero, Lee was in charge of flash design at AMD and Spansion, where he was responsible for multiple generations of shipping memory products. He has also served as SVP of Engineering at Sipex and Exar, as well as VP of Engineering and COO at Kilopass. Lee holds a degree in Electrical Engineering from the University of California, Berkeley.

Additional Resources:

Link to Nantero Management Team

Link to expanded Nantero Advisory Board and BOD

Nantero Corporate Video

About Nantero

As the world leader in carbon nanotube electronics, Nantero has developed a new generation of memory called NRAM™ (non-volatile random access memory) that can enable a variety of exciting new features and products in both consumer and enterprise electronics. This new super-fast, ultra-high density memory can replace both DRAM and flash in a single chip, or enable new applications as a storage class memory, while also delivering the low power, high speed, reliability, and endurance needed to drive the next wave of electronics innovation. Visit Nantero at or follow Nantero at Twitter @nantero.


For More Information:
Kelly Karr
Nantero Public Relations

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