Nantero Named Best Carbon Nanotube Technology Manufacturer; NRAM® Receives Innovation Award in Computing Memory

The 2015 Global Products & Services Awards Recognize Companies
Delivering Innovation and Moving their Industry Forward

WOBURN, MA – August 20, 2015 – Nantero, the world leader in carbon nanotube electronics, today announced it has been recognized by the 2015 Global Products & Services Awards as the “Best Carbon Nanotube Technology Manufacturer” while its NRAM technology won the innovation award in computing memory. These awards highlight Nantero’s success in delivering a new generation of super-fast, ultra-high density memory that will enable a variety of exciting new features and products in both consumer and enterprise electronics.
“We are pleased to see Nantero and its NRAM technology recognized for the high level of innovation we are delivering to the industry,” Greg Schmergel, Co-Founder, President and CEO of Nantero, Inc. “With NRAM already installed in multiple production fabs and being designed into exciting new products today, we have made significant progress in delivering a new generation of memory that has the potential to support substantial innovations in electronics.”
Speaking about the awards, Awards Co-ordinator Jonathan Hicks said: “Across all four corners of the globe, businesses and professionals are creating and implementing ground-breaking products and services. With these awards, we honor those forward-thinking professionals who are making waves in their industry as well as providing stellar results for their clients.”
About NRAM
NRAM is a new generation of memory that is as fast as DRAM, permanently nonvolatile, can deliver terabits of storage capacity, and consumes very little power. Targeting both the embedded and standalone memory markets, Nantero is already licensing its NRAM IP to major chip manufacturers, foundries and electronics companies around the world. Key advantages of NRAM include:

CMOS Compatible: Works in standard CMOS fabs with no new equipment needed
Limitless Scalability: Designed to scale below 5nm in the future
High Endurance: Proven to operate for orders of magnitude more cycles than flash
Faster Read and Write: Same as DRAM, 100s of times faster than NAND
High Reliability: will retain memory for >1,000 years at 85 degrees Celsius or more than 10 years at 300 degrees Celsius
Low Power: Essentially zero in standby mode, 160x lower write energy per bit than NAND
Low Cost: Simple structure, can be 3D multi-layer and multi-level cell (MLC)

Additional Resources:
Nantero Corporate Video
Image Library: Product and Technology Photos
Nantero Website

About Nantero
As the world leader in carbon nanotube electronics, Nantero has developed a new generation of memory called NRAM® (non-volatile random access memory) that can enable a variety of exciting new features and products in both consumer and enterprise electronics. This new super-fast, ultra-high density memory can replace both DRAM and flash in a single chip, or enable new applications as a storage class memory, while also delivering the low power, high speed, reliability, and endurance needed to drive the next wave of electronics innovation. Visit Nantero at www.nantero.com or follow Nantero at Twitter @nantero.

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For More Information:
Kelly Karr
Nantero Public Relations
408-718-9350
Kelly@nantero.com